Ultrafast magnon-transistor at room temperature

TL;DR

This paper proposes a room-temperature magnon-transistor based on triangular molecular magnets, demonstrating control of spin current via electric or magnetic fields, and designing logic gates with potential for practical applications.

Contribution

It introduces a novel magnon-transistor design using molecular magnets and shows how to implement logic gates like NAND at room temperature.

Findings

Magnon-transistor can operate at room temperature with 11 ns switching time.

Electric and magnetic fields can control spin current in molecular magnets.

A system of three magnon-transistors can form a NAND-gate.

Abstract

We study sequential tunneling of magnetic excitations in nonitinerant systems (either magnons or spinons) through triangular molecular magnets. It is known that the quantum state of such molecular magnets can be controlled by application of an electric- or a magnetic field. Here, we use this fact to control the flow of a spin current through the molecular magnet by electric- or magnetic means. This allows us to design a system that behaves as a magnon-transistor. We show how to combine three magnon-transistors to form a NAND-gate, and give several possible realizations of the latter, one of which could function at room temperature using transistors with a 11 ns switching time.