Small quantum dots of diluted magnetic III-V semiconductor compound
Liudmila A. Pozhar

TL;DR
This paper uses quantum many-body theory to study small, doped magnetic semiconductor quantum dots, revealing their potential as spintronic nanomaterials due to delocalized and polarized electron spins.
Contribution
It provides a computational synthesis approach demonstrating that doped GaAs and InAs quantum dots are stable magnetic molecules with delocalized spins, advancing nanoscale magnetic material design.
Findings
Doped quantum dots exhibit delocalized and polarized electron spin density.
Such quantum dots are stable magnetic molecules with potential spintronic applications.
Numerical spin density values suggest usefulness in magneto-optical sensors.
Abstract
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown since experimental synthesis of nanoscale magnetic semiconductors, that is, nanoscale semiconductor compounds with enhanced magnetic properties. This enhancement is achieved by several methods, and in particular by doping common semiconductor compounds with some atoms, such as Mn or V. Experimental studies indicate that the electron spin density in the case of thin nanoscale magnetic semiconductor films and QDs may be delocalized. As described in this chapter, quantum many body theory-based, computational synthesis (i.e., virtual synthesis) of tetrahedral symmetry GaAs and InAs small pyramidal QDs doped with sabstitutional Mn or V atoms proves that…
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Taxonomy
TopicsZnO doping and properties · Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena
