Designing band gap of graphene by B and N dopant atoms

TL;DR

This study uses ab-initio calculations to explore how B and N doping alters graphene's electronic properties, enabling band gap tuning for electronic applications.

Contribution

It demonstrates how doping concentration and site affect graphene's band gap and stability, providing a method to tune electronic properties.

Findings

B doping induces p-type behavior

N doping induces n-type behavior

Band gap varies with dopant placement

Abstract

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one atom of the dopant in 50 host atoms) to 12 % (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All the calculations have been performed by using VASP (Vienna Ab-initio Simulation Package) based on density functional theory. By B and N doping p-type and n-type doping is induced respectively in the graphene sheet. While the planar structure of the graphene sheet remains unaffected on doping, the electronic properties change from semimetal to semiconductor with increasing number of dopants. It has been observed that isomers formed differ significantly in the stability, bond length and band gap introduced. The band gap is maximum when dopants are placed at same sublattice points of graphene due to combined effect of symmetry breaking of sub lattices and the band gap is closed when dopants are placed at adjacent positions (alternate sublattice positions). These interesting results provide the possibility of tuning the band gap of graphene as required and its application in electronic devices such as replacements to Pt based catalysts in Polymer Electrolytic Fuel Cell (PEFC).