The nontrivial role of interfacial or film-thickness in a magnetic field at a one-electron and a one-Composite Fermion level
G. Konstantinou, K. Moulopoulos

TL;DR
This paper develops an exact analytical approach to study the effects of finite quantum well thickness on the magnetic properties of electron systems in magnetic fields, revealing internal phase transitions and corrections to classical oscillation periods.
Contribution
It introduces a systematic, exact Landau Level-based method that captures nontrivial thickness effects and phase transitions, extending to composite fermion and topological insulator systems.
Findings
Discovery of internal phase transitions at partial LL filling
Nontrivial corrections to de Haas-van Alphen periods
Predictions of thickness-dependent magnetic responses in topological insulators
Abstract
By developing a canonical approach that is exact, physically transparent and subtly different from standard methods, we present a systematic study with exact analytical calculations based on a Landau Level (LL) picture of the energetics of a many-electron system in an interface (or film) and in the presence of a uniform and perpendicular magnetic field, by seriously taking into account the finite thickness of the Quantum Well (QW) along the field. We find internal phase transitions (i.e. at partial LL filling) for the global magnetization and magnetic susceptibility that are not captured by other approaches, and that give rise to nontrivial corrections to the standard de Haas-van Alphen periods (but in a manner that reproduces the exact quantal deviations from the semiclassical periodicity in the limit of the full 3D space, a problem mostly discussed in astrophysical applications and…
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Taxonomy
TopicsRare-earth and actinide compounds · Theoretical and Computational Physics · Magnetic properties of thin films
