Surface resistance measurements of HTS thin films using SLAO dielectric resonator

TL;DR

This paper demonstrates a method for measuring the surface resistance of HTS thin films using SLAO dielectric resonators at 18.2 GHz, comparing results with sapphire resonators at different frequencies, enabling multi-frequency microwave characterization.

Contribution

It introduces the use of SLAO dielectric resonators for surface resistance measurements of HTS films and validates their effectiveness against sapphire resonators across multiple frequencies.

Findings

Good agreement between SLAO and sapphire measurements after frequency scaling.

Feasibility of using different dielectric rods for multi-frequency characterization.

Error analysis confirms measurement reliability.

Abstract

Surface resistance of HTS films is typically measured using Sapphire dielectric rod resonators enclosed in a copper cavity. In this paper we present surface resistance measurements of YBa2Cu3O7-{\delta} films using Strontium Lanthanum Aluminate (SLAO) at a resonant frequency of 18.2 GHz. We have performed the error analysis of the cavity loaded with SLAO dielectric rod and also verification measurements using two Sapphire (Al2O3) rod resonators operating at resonant frequencies of 24.6 GHz and 10 GHz respectively. Good agreement between the values of Rs of two sets of YBa2Cu3O7-{\delta} films measured using the SLAO and the Sapphire dielectrics has been obtained after a frequency scaling of Rs was applied. Using different dielectric rods of the same size in the same cavity for measurements of Rs of HTS films, it is feasible to do microwave characterization of the same films at differing frequencies.