Compositional disorder and tranport peculiarities in the amorphous indium-oxides
U. Givan, Z. Ovadyahu

TL;DR
This study investigates the disorder-induced metal-insulator transition in amorphous indium-oxide films with varying carrier concentrations, revealing that compositional fluctuations influence transport properties and challenge traditional disorder parameters like kFl.
Contribution
It demonstrates the impact of compositional disorder on the metal-insulator transition and questions the validity of using kFl as a universal disorder measure for superconducting transitions.
Findings
MIT occurs at kFl~0.3 in both versions of the material.
No superconductivity observed down to 0.3K in the low-carrier version.
Spatial compositional fluctuations extend over mesoscopic scales.
Abstract
(abridged) We present results of the disorder-induced metal-insulator-transition (MIT) in three-dimensional amorphous indium-oxide films. The amorphous version studied here differs from the one reported earlier [PRB 46, 10917 (1992)] in that it has a much lower carrier concentration. As a measure of the static disorder we use the dimensionless parameter kFl. Thermal annealing is employed as the experimental handle to tune the disorder. On the metallic side of the transition, the low temperature transport exhibits weak-localization and electron-electron correlation effects characteristic of disordered electronic systems. The MIT occurs at a kFl~0.3 for both versions of the amorphous material. However, in contrast with the results obtained on the electron-rich version of this system, no sign of superconductivity is seen down to ~0.3K even for the most metallic sample used in the current…
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