Mechanism to Generate a Two-Dimensional Electron Gas at the Surface of the Charge-Ordered Semiconductor BaBiO3
Ver\'onica Vildosola, Francisco G\"uller, Ana M. Llois

TL;DR
This paper reveals a new physical mechanism for creating a two-dimensional electron gas at the surface of BaBiO3, driven by charge order breaking due to surface oxygen environment, independent of vacancies or polar effects.
Contribution
It introduces a self-doping mechanism for 2DEG formation at charge-ordered semiconductor surfaces, demonstrated specifically on BaBiO3(001).
Findings
2D electron gas forms at BaBiO3 surface due to charge order breaking.
Surface becomes more metallic and cubic-like, inner layers remain insulating.
Metallization depends on surface termination, enabling nanostructuring.
Abstract
In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the incomplete oxygen environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a self-doping effect. This mechanism might apply to many charge ordered systems, in particular, we study the case of BaBiO3(001). In bulk, this material is a prototype of a "forbidden valence" compound in which the formal "metallic" Bi4+ state is skipped exhibiting a charge disproportionated Bi3+ - Bi5+ ordered structure. At room temperature, this charge disproportionation together with the breathing distortions gives rise to a Peierls semiconductor with monoclinic crystal structure. At higher…
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