Luminescence of alpha-quartz
Anatoly Trukhin, Kaspars Truhins

TL;DR
This paper reviews the luminescence properties of alpha-quartz, focusing on self-trapped excitons, defect-related emissions, and impurity effects, highlighting how irradiation and ion exchange influence luminescence behavior.
Contribution
It provides a comprehensive analysis of various luminescence mechanisms in alpha-quartz, including impurity and defect-related emissions, and how ion exchange modifies these properties.
Findings
STE luminescence at 2.6-2.7 eV observed under ionising radiation
Defect luminescence at 5 eV appears after heavy irradiation at low temperatures
Noble ion doping introduces new luminescence bands at 3.4 eV and 4.75 eV
Abstract
Among the host materials luminescence the luminescence of the self-trapped exciton (STE) is reviewed. This luminescence, which band is situated at 2.6 to 2.7 eV, could be observed mainly under ionising radiation with energetic yield about 0.2. The STE does not participate in pure recombination processes. Host material defect luminescence at 5 eV appears in alpha-quartz after heavy irradiation. It is constituted of permanent defect after neutron irradiation and transient defect after dens electron beam irradiation. This luminescence could be observed well at temperatures below 60 K. All another luminescence are of impurity nature. The Ge impurity luminescence in alpha-quartz explained as STE near Ge. The aluminium and alkali complexes. One of them is with UV band at 6 eV, appears at low temperatures and could be excited only in tunnelling recombination process between pairs (AlO4 Me),…
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Taxonomy
TopicsGlass properties and applications · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence
