An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Stanis{\l}aw Krukowski, Jakub So{\l}tys, Jolanta Borysiuk, Jacek, Piechota

TL;DR
This paper investigates how a parallel electric field alters the electron dispersion in graphene, revealing nonlinear changes that could enable advanced high-speed transistors and logic devices operating in the Dirac regime.
Contribution
It demonstrates that a parallel electric field induces nonlinear dispersion relations in graphene, offering a new approach for Dirac-based electronic devices.
Findings
Parallel electric field causes nonlinear dispersion in graphene.
The effect breaks hexagonal symmetry, enabling new device functionalities.
Potential applications in high-speed transistors and logic devices.
Abstract
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.
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