Optical properties of Bi2Te2Se at ambient and high pressure

TL;DR

This study investigates the optical properties of Bi2Te2Se, a topological insulator, revealing how temperature and high pressure influence its electronic structure, including a pressure-induced gap closure at 8 GPa.

Contribution

It provides detailed experimental data on the optical response of Bi2Te2Se under varying temperature and pressure, highlighting the pressure-induced gap collapse and limitations of ab initio predictions.

Findings

Optical gap of 300 meV at room temperature

Pressure above 8 GPa causes abrupt gap closure

Pressure and temperature significantly affect interband absorption features

Abstract

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm^{-1} is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.