Infrared spectroscopy of hole doped ABA-stacked trilayer graphene

TL;DR

This study uses infrared spectroscopy to analyze hole-doped ABA-stacked trilayer graphene, accurately modeling its electronic properties and extracting layer-specific charge densities and interlayer permittivity.

Contribution

It demonstrates the effectiveness of combining the tight-binding model and Kubo formula to interpret infrared spectra of doped trilayer graphene.

Findings

Accurate modeling of gate voltage-modulated reflectivity spectra.

Layer-specific charge densities and potentials determined.

Interlayer permittivity extracted from spectra.

Abstract

Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {\pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.