Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As

TL;DR

This paper reports the growth of an n-type ferromagnetic semiconductor (In,Fe)As with controllable ferromagnetism via Fe and Be doping, enabling potential spintronic devices and insights into carrier-mediated ferromagnetism.

Contribution

It demonstrates the successful synthesis of an n-type electron-induced ferromagnetic semiconductor with independent control over magnetic and electronic properties.

Findings

(In,Fe)As exhibits ferromagnetism induced by electrons.

Ferromagnetism can be controlled by Fe and Be doping levels.

Potential applications in spintronic devices like spin LEDs and transistors.

Abstract

We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.