Low threshold, room-temperature microdisk lasers in the blue spectral range

TL;DR

This paper demonstrates room-temperature, optically pumped blue microdisk lasers using InGaN quantum dots in GaN microcavities, achieving low lasing thresholds and advancing nitride-based photonic devices.

Contribution

First demonstration of lasing from GaN microdisk cavities with InGaN quantum dots, showing low thresholds and high quality factors for blue spectral range lasers.

Findings

Lasing achieved at thresholds as low as 0.28 mJ/cm2

High quality factor GaN microdisk cavities with InGaN QDs

Potential for low threshold, efficient blue photonic devices

Abstract

InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.