Calculation of thermal parameters of SiGe microbolometers
A. V. Voitsekhovskii, D. V. Grigoryev, V. A. Yuryev, and S. N., Nesmelov

TL;DR
This paper models the thermal parameters of SiGe microbolometers, achieving good agreement with experimental data and suggesting optimization strategies for sensitivity enhancement.
Contribution
It introduces a numerical modeling approach to calculate thermal parameters and proposes optimization methods for microbolometer sensitivity.
Findings
Thermal conduction ranges from 2x10^-7 to 7x10^-8 W/K.
Thermal response time ranges from 1.5 to 4.5 ms.
Optimization of geometry and boundary resistance improves sensitivity.
Abstract
The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10 and 7x10 W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10 cmK/W at the SiGe interface.
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