Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer

TL;DR

This paper investigates how vacancies in ABC stacked trilayer graphene create unique zero energy electronic states, with their properties depending on vacancy position and external electric fields, revealing new localized modes.

Contribution

It introduces the discovery of vacancy-induced zero energy modes specific to ABC trilayer graphene, differing from Bernal stacking, and analyzes their electronic and localization properties.

Findings

Vacancies induce new zero energy states in ABC trilayer graphene.

The position of vacancies affects the nature of these zero energy modes.

External electric fields modify the electronic spectrum and vacancy states.

Abstract

The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with Bernal stacking. The electronic modification induced in the sample by the new vacancy states is characterised by computing the local density of states and their localisation properties are studied by the inverse participation ratio. We also analyse the situation in the presence of a gap in the spectrum due to a perpendicular electric field.