Small-signal amplifier based on single-layer MoS2
Branimir Radisavljevic, Michael B. Whitwick, Andras Kis

TL;DR
This paper demonstrates a small-signal amplifier using single-layer MoS2, showing it can operate at room temperature with a gain of 4 up to 2 kHz, highlighting its potential for 2D material-based analog circuits.
Contribution
The first demonstration of a MoS2-based small-signal amplifier with room temperature operation and measurable gain.
Findings
Achieved a gain of 4 at room temperature
Operated effectively up to 2 kHz frequency
Showed MoS2's potential for analog circuit applications
Abstract
In this Letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.
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