Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth

TL;DR

This paper demonstrates that overgrowing diamond with CVD can significantly improve the spin coherence times of shallowly implanted NV centers, advancing quantum register scalability.

Contribution

It introduces a CVD-overgrowth method to enhance the spin properties of shallow implanted NV centers, achieving longer coherence times.

Findings

Coherence times increased up to 250 μs

Dynamic decoupling extends decoherence to milliseconds

Enhanced potential for strong defect coupling

Abstract

The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth technique. An increase of the coherence times up to an order of magnitude (T_2 = 250 \mu s) was achieved. Dynamic decoupling of defects spins achieves ms decoherence times. The study marks a further step towards achieving strong coupling among defects positioned with nm precision.