Indexing Fe-phases in/on GaN using x-ray powder diffraction
Mauro Rovezzi

TL;DR
This paper catalogs x-ray diffraction reflections of iron-related phases that form during MOVPE growth of Fe on GaN, aiding phase identification in material synthesis.
Contribution
It provides a comprehensive list of diffraction peaks for Fe phases in GaN growth, facilitating phase analysis during epitaxy.
Findings
Main diffraction reflections for Fe phases identified
Data helps distinguish Fe-related phases in GaN growth
Provides reference diffraction peaks for GaN and sapphire
Abstract
This document reports the x-ray powder diffraction main reflections (intensity threshold >= 100) for possible Fe-related phases forming during the metal-organic vapor phase epitaxy (MOVPE) growth of Fe in NH_3/H_2 mixture on wurtzite-GaN/sapphire. The 2\theta values are given for Cu K\alpha_1 radiation (1.5406 \AA) in the range 25-100 deg (ordered by increasing 2\theta). The GaN(000l) and Al_2O_3(000l) are also reported for reference.
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Taxonomy
TopicsGaN-based semiconductor devices and materials
