Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase
T. Valla, Huiwen Ji, L. M. Schoop, A. P. Weber, Z.-H. Pan, J. T., Sadowski, E. Vescovo, A. V. Fedorov, A. N. Caruso, Q. D. Gibson, L. Muchler,, C. Felser, and R. J. Cava

TL;DR
This study investigates a new topological insulator material, Bi$_4$Se$_{2.6}$S$_{0.4}$, formed by a natural superlattice of Bi and Bi$_2$Se$_3$, revealing its surface states and topological properties through advanced photoemission techniques.
Contribution
It reports the discovery and characterization of a topological insulator in a Bi-Bi$_2$Se$_3$ superlattice phase, demonstrating its surface states and spin structure.
Findings
Existence of a large, hexagonally shaped Fermi surface around the $b3$ point.
Surface state exhibits spin-momentum locking characteristic of topological insulators.
Crystals cleave along interfaces, creating terraces for one-dimensional topological studies.
Abstract
We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and BiSe. The compound, based on BiSe, is a 1:1 natural superlattice of alternating Bi layers and BiSe layers; the inclusion of S allows the growth of large crystals, with the formula BiSeS. The crystals cleave along the interfaces between the Bi and BiSe layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the point of…
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