Two opposite hysteresis curves in semiconductors with mobile dopants

TL;DR

This paper introduces a theoretical model explaining the origin of two opposite hysteresis curves in semiconductors with mobile dopants, attributing them to dopant distribution inhomogeneity and controllable by dopant movement.

Contribution

The paper provides the first fundamental theory explaining the formation of opposite hysteresis directions in SMD based on dopant spatial inhomogeneity.

Findings

Hysteresis directions are linked to dopant distribution

Hysteresis can be controlled by dopant movement

The model explains experimental observations

Abstract

Recent experimental researches on semiconductors with mobile dopants (SMD) have reported unconventional hysteretic current-voltage (I-V) curves, which form dynamically in either one of the two opposite directions, the counter-figure-eight and figure-eight ways. However the fundamental theory for the formation of the two directions is still absent, and this poses a major barrier for researches oriented to applications. Here, we introduce a theoretical model to explain the origin of the two directions, and find that the two ways originate from the spatial inhomogeneity of the dopant distribution in SMD. The counter-figure-eight (figure-eight) way of the hysteretic curve is obtained when dopants are driven from far from (near) the Schottky interface to the opposite side in the SMD. This finding indicates that the directions of hysteretic curve in SMD can be controlled.