Planar arrays of magnetic nanocrystals embedded in GaN

TL;DR

This paper reports the fabrication and characterization of planar arrays of magnetic nanocrystals embedded in GaN, demonstrating control over their phase and composition for potential spintronic applications.

Contribution

It introduces a method to fabricate and tune the phase and composition of magnetic nanocrystals in GaN using epitaxial growth techniques.

Findings

Nanocrystal phase and composition can be controlled via growth parameters.

High-resolution microscopy confirms epitaxial relationship with GaN.

Potential for room-temperature spintronic device applications.

Abstract

Single planar arrays of Ga(x)Fe(4-x)N magnetic nanocrystals embedded in GaN have been fabricated in an epitaxial process. The phase of the nanocrystals and their epitaxial relationship with the host matrix are studied $via$ high-resolution transmission electron microscopy and high-resolution x-ray diffraction. By changing the growth parameters and mode, the crystallographic phase and chemical composition of the nanocrystals can be varied on demand. In view of the different magnetic properties of the various phases, applications in room-temperature ferromagnetic as well as antiferromagnetic spintronic devices are envisaged.