Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit

TL;DR

This paper demonstrates how a GaAs singlet-triplet qubit can be used for precise electrometry by analyzing exchange oscillations and environmental noise, revealing non-Markovian fluctuations and guiding improvements in qubit coherence and charge sensing.

Contribution

It provides the first detailed measurement of voltage noise effects on a singlet-triplet qubit during exchange oscillations, highlighting non-Markovian noise and temperature dependence.

Findings

High-frequency fluctuations are small, enabling charge sensing with high sensitivity.

Dephasing is caused by non-Markovian voltage fluctuations.

Temperature influences the dephasing behavior.

Abstract

Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,and in metrology the frequency of the precession provides a sensitive measurement of the splitting. However, on a timescale of the coherence time, $T_2$, the qubit loses its quantum information due to interactions with its noisy environment, causing qubit oscillations to decay and setting a limit on the fidelity of quantum control and the precision of qubit-based measurements. Understanding how the qubit couples to its environment and the dynamics of the noise in the environment are therefore key to effective QIS experiments and metrology. Here we show measurements of the level splitting and dephasing due to voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Using free evolution and Hahn echo experiments we probe the low frequency and high frequency environmental fluctuations, respectively. The measured fluctuations at high frequencies are small, allowing the qubit to be used as a charge sensor with a sensitivity of $2 \times 10^{-8} e/\sqrt{\mathrm{Hz}}$, two orders of magnitude better than the quantum limit for an RF single electron transistor (RF-SET). We find that the dephasing is due to non-Markovian voltage fluctuations in both regimes and exhibits an unexpected temperature dependence. Based on these measurements we provide recommendations for improving $T_2$ in future experiments, allowing for higher fidelity operations and improved charge sensitivity.