Boundary States in Graphene Heterojunctions
P. V. Ratnikov, A. P. Silin (Lebedev Physical Institute, Russian, Academy of Sciences)

TL;DR
This paper investigates a novel class of boundary states in graphene heterojunctions, identified through dispersion curve intersections, with potential occurrence in both sharp and smooth interfaces, advancing understanding of electronic states in graphene structures.
Contribution
It introduces a new type of boundary states in graphene heterojunctions based on dispersion curve intersections, expanding the theoretical understanding of interface states.
Findings
Boundary states form at dispersion curve intersections.
States can occur in both sharp and smooth heterojunctions.
The study provides conditions for the formation of these states.
Abstract
A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and its gap modification. This type of states can also occur in smooth graphene-based heterojunctions.
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