High-frequency performance of scaled carbon nanotube array field-effect transistors

TL;DR

This paper demonstrates high-frequency performance of scalable, aligned carbon nanotube array transistors with record intrinsic cut-off frequencies, highlighting their potential for future high-speed electronics.

Contribution

It reports the highest experimentally achieved intrinsic current and power gain cut-off frequencies for carbon nanotube transistors, using a scalable assembly process.

Findings

Intrinsic cut-off frequency of 153 GHz achieved

Extrinsic power gain cut-off frequency of 15 GHz

Aligned nanotube arrays enable high-frequency performance

Abstract

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.