Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice

TL;DR

This paper demonstrates ballistic transport phenomena in high-mobility GaAs 2D holes with a strain-induced superlattice, revealing commensurability oscillations and providing insights into scattering and potential effects.

Contribution

It reports the first observation of ballistic commensurability oscillations in a strain-induced lateral superlattice of GaAs 2D holes, including analysis of scattering times and potential strength.

Findings

Observation of commensurability oscillations matching electrostatic conditions

Determination of ballistic scattering time for 2D holes

Estimation of the induced periodic potential magnitude

Abstract

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.