External uniform electric field removing flexoelectric effect in epitaxial ferroelectric thin films
Hao Zhou, Jiawang Hong, Yihui Zhang, Faxin Li, Yongmao Pei, Daining, Fang

TL;DR
This paper demonstrates that applying an optimized uniform electric field can completely eliminate the flexoelectric effect in epitaxial ferroelectric thin films, thereby improving their ferroelectric properties.
Contribution
It introduces a method to remove flexoelectric effects using a uniform electric field, simplifying control compared to gradient fields.
Findings
Uniform electric field can suppress flexoelectricity.
Flexoelectric effect significantly influences ferroelectric properties.
Method enhances ferroelectric performance by eliminating flexoelectricity.
Abstract
Using the modified Landau-Ginsburg-Devonshire thermodynamic theory, it is found that the coupling between stress gradient and polarization, or flexoelectricity, has significant effect on ferroelectric properties of epitaxial thin films, such as polarization, free energy profile and hysteresis loop. However, this effect can be completely eliminated by applying an optimized external, uniform electric field. The role of such uniform electric field is shown to be the same as that of an ideal gradient electric field which can suppress the flexoelectricty effect completely based on the present theory. Since the uniform electric field is more convenient to apply and control than gradient electric field, it can be potentially used to remove the flexoelectric effect induced by stress gradient in epitaxial thin films and enhance the ferroelectric properties.
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