Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities

TL;DR

This study correlates the structural features of natural defects in GaAs/AlAs microcavities with their localized polariton spectra, revealing how Ga droplet-induced thickness modulations affect optical properties.

Contribution

It provides a detailed 3D structural analysis of natural defects and links these to their optical polariton spectra, highlighting the role of Ga droplet deposition during growth.

Findings

Defects originate from local GaAs thickness increases due to Ga droplets.

Defects show modulation heights up to 140nm and lateral extensions of 2-4μm.

Surface mobility of Ga influences defect shape and size with temperature.

Abstract

We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140nm for oval defects and 90nm for round defects are found, while the lateral extension is about 2um for oval and 4um for round defects. The GaAs thickness increase is attributed to Ga droplets deposited during growth due to Ga cell spitting. Following the droplet deposition, the thickness modulation expands laterally while reducing its height, yielding oval to round mounds of the interfaces and the surface. With increasing growth temperature, the ellipticity of the mounds is decreasing and their size is increasing. This suggests that the expansion is related to the surface mobility of Ga, which with increasing temperature is increasing and reducing its anisotropy between the [110] and [1-10] crystallographic directions. Comprehensive data consisting of surface profiles of defects measured using differential interference contrast (DIC) microscopy, volume information obtained using FIB/SEM, and characterization of the resulting confined polariton spectrum are presented.