Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

TL;DR

This paper reports the successful growth of ZnSe nanowires on GaAs substrates with different orientations and the incorporation of CdSe quantum dots within these nanowires, analyzed through advanced microscopy techniques.

Contribution

It demonstrates a novel method for embedding CdSe quantum dots into ZnSe nanowires grown by MBE, with detailed microstructure analysis.

Findings

ZnSe nanowires grown on GaAs with specific orientations

Successful incorporation of CdSe quantum dots in ZnSe nanowires

Microstructure confirmed by TEM and related techniques

Abstract

ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.