Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk

TL;DR

This paper reports on x-ray measurements of a hybrid CMOS detector with a novel bonding structure that significantly reduces interpixel capacitance, improving detector performance.

Contribution

The study introduces a unique bonding structure in hybrid CMOS detectors that decreases interpixel capacitive crosstalk compared to previous designs.

Findings

Reduced interpixel capacitance due to increased bonding pitch

Improved detector performance with lower crosstalk

Validation through x-ray measurements

Abstract

We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36{\mu}m pixel size, and the readout array has a pitch of 18{\mu}m; but only one readout circuit line is bonded to each 36x36{\mu}m absorber pixel. This unique bonding structure gives the readout an effective pitch of 36{\mu}m. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS detector reported by Bongiorno et al. 2010 and Kenter et al. 2005.