L-valley Electron Spin Dynamics in GaAs

TL;DR

This study investigates electron spin dynamics in GaAs, revealing that a significant portion of spin memory is preserved during valley scattering, with a measured L valley spin relaxation time of 200 fs.

Contribution

It provides the first direct measurement of L valley electron spin relaxation time in GaAs using combined optical and time-resolved spectroscopy.

Findings

Spin memory is conserved during L to Γ valley scattering.

L valley electron spin relaxation time is approximately 200 femtoseconds.

Experimental results agree with theoretical predictions.

Abstract

Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $\Gamma$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photo-excitation experiments with time-resolved photoluminescence spectroscopy of $\Gamma$ valley spin-polarized photogenerated electrons allows us to deduce a typical L valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.