Interlayer Heat Transfer in Bilayer Carrier Systems

TL;DR

This paper provides a theoretical analysis of heat transfer between layers in bilayer systems, revealing conditions where interlayer heat transfer surpasses electron-phonon transfer, especially with disorder effects considered.

Contribution

It introduces new theoretical expressions and detailed calculations for interlayer heat transfer in semiconductor and graphene bilayers, highlighting the impact of disorder.

Findings

Interlayer heat transfer can exceed electron-phonon transfer below a certain temperature.

Disorder significantly enhances interlayer heat transport.

The study provides formulas applicable to GaAs, Si, and graphene bilayers.

Abstract

We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to near-field interlayer carrier interaction. We derive general expressions for the interlayer heat transfer and thermal conductance. Approximation formulas and detailed calculations for semiconductor and graphene based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron-phonon heat transfer below (system dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold towards higher temperatures.