A Transfer Hamiltonian model for devices based in quantum dot arrays

TL;DR

This paper introduces a Transfer Hamiltonian-based model for simulating electron transport in quantum dot arrays, incorporating interactions, capacitive couplings, and self-consistent potentials to reflect realistic device behavior.

Contribution

It develops a comprehensive, parameter-based model for quantum dot device transport that includes interactions, capacitive effects, and self-consistent potentials, advancing simulation accuracy.

Findings

Accurately models electron transport in quantum dot arrays.

Incorporates capacitive couplings and tunneling effects.

Uses self-consistent field calculations for local potentials.

Abstract

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime.