Determination of Sensitivity of Semiconductor Detectors of Gamma-Radiation

TL;DR

This paper investigates the sensitivity of room temperature gamma-radiation detectors made from wide band-gap semiconductors using Monte Carlo simulations, deriving approximate formulas for detector response and identifying their valid energy and thickness ranges.

Contribution

It introduces approximate formulas linking detector sensitivity to absorbed energy and defines their accuracy limits across different gamma energies and detector thicknesses.

Findings

Approximate formulas effectively predict detector sensitivity within specific energy and thickness ranges.

Maximum errors of formulas are quantified for different detector configurations.

Monte Carlo simulations validate the applicability of derived formulas.

Abstract

Properties of response functions of room temperature gamma-radiation detectors based on wide band-gap semiconductors are researched using Monte-Carlo method. It is shown that approximate formulas which connect detector sensitivity with absorbed energy of monochromatic radiation in the energy range between 0.06 and 3 MeV can be obtained for some kinds of semiconductors. We determined gamma-quantum energy regions and detector thicknesses where obtained approximate formulas are correct. Regions of maximum error of approximate formulas are also determined.