Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog (NEEL), Miryam Elouneg-Jamroz (NEEL), Edith, Bellet-Amalric (INAC), Samir Bounouar (NEEL), Catherine Bougerol (NEEL),, R\'egis Andr\'e (NEEL), Yann Genuist (NEEL), Jean Philippe Poizat (NEEL),, Kuntheak Kheng (SP2M), Serge Tatarenko (NEEL)
TL;DR
This paper demonstrates that HAADF STEM can reliably determine the polarity of ZnSe nanowires grown on GaAs, even with slight specimen tilts, validated through experimental and simulated image comparisons.
Contribution
It shows that residual tilts below 15 mrad do not hinder polarity analysis of ZnSe nanowires using HAADF STEM, providing a practical guideline for such measurements.
Findings
Residual tilt below 15 mrad does not impair polarity determination.
Simulated images confirm experimental observations.
HAADF STEM is effective for analyzing nanowire polarity.
Abstract
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis does not impair the interpretation of the experimental images.
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