Magnetic properties of HgTe quantum wells
Benedikt Scharf, Alex Matos-Abiague, and Jaroslav Fabian

TL;DR
This paper investigates the magnetic properties and edge states of HgTe quantum wells under magnetic fields, revealing differences between normal and inverted regimes, and analyzing magnetization and susceptibility behaviors including oscillations and discontinuities.
Contribution
It provides analytical and numerical analysis of magnetic edge states and magnetization in HgTe quantum wells, highlighting differences between normal and inverted band structures and their magnetic responses.
Findings
Counterpropagating spin-polarized states exist only in the inverted regime.
Magnetization exhibits de Haas-van Alphen oscillations with temperature-dependent amplitude.
Discontinuity in ground-state magnetization occurs at the band crossover in the inverted regime.
Abstract
Using analytical formulas as well as a finite-difference scheme, we investigate the magnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields and hard walls, for the band-structure parameters corresponding to the normal and inverted regimes. Whereas one cannot find counterpropagating, spin-polarized states in the normal regime, below the crossover point between the uppermost (electron-like) valence and lowest (hole-like) conduction Landau levels, one can still observe such states at finite magnetic fields in the inverted regime, although these states are no longer protected by time-reversal symmetry. Furthermore, the bulk magnetization and susceptibility in HgTe quantum wells are studied, in particular their dependence on the magnetic field, chemical potential, and carrier densities. We find…
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