Finger-gate manipulated quantum transport in a semiconductor narrow constriction with spin-orbit interactions and Zeeman effect

TL;DR

This paper explores how spin-orbit interactions and magnetic fields affect quantum transport in narrow semiconductor constrictions, revealing how scattering potentials create distinctive conductance features.

Contribution

It introduces a detailed analysis of the combined effects of Rashba-Dresselhaus spin-orbit coupling and Zeeman splitting on quantum transport in semiconductor constrictions.

Findings

Attractive potentials induce Fano line-shapes in conductance.

Repulsive potentials create hole-like quasi-bound states.

Spin-orbit and Zeeman effects significantly alter transport properties.

Abstract

The authors investigate quantum transport in a narrow constriction fabricated by narrow band gap semiconductor materials with spin-orbit (SO) couplings. We consider the Rashba-Dresselhaus (RD) spin-orbit interactions (SOIs) and the Zeeman effect induced by an in-plane magnetic field along the transport direction. The interplay of the RD-SOI and the Zeeman effect may induce a SOI-Zeeman gap and influence the transport properties. We demonstrate that an attractive scattering potential may induce electron-like quasi-bound-state feature and manifest the RD-SOI-Zeeman induced Fano line-shape in conductance. Furthermore, a repulsive scattering potential may induce hole-like quasi-bound-state feature on the subband top of the lower spin branch.