Extending ballistic graphene FET lumped element models to diffusive devices

TL;DR

This paper presents an extended lumped element model for graphene FETs that accurately describes both ballistic and diffusive devices, improving predictive capabilities for various device sizes.

Contribution

The authors modify the existing top-of-the-barrier model to accurately simulate both ballistic and diffusive graphene FETs, broadening its applicability.

Findings

Good agreement with literature data for nano-sized and large-area devices

Accurate prediction of drain current and transconductance across device types

Model validity extends from ballistic to diffusive regimes

Abstract

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained.