Prediction of the bias voltage dependent magnetic contrast in spin-polarized scanning tunneling microscopy

TL;DR

This paper introduces a theoretical method to predict bias voltage-dependent magnetic contrast in spin-polarized STM using single point measurements, reducing the need for extensive surface scanning.

Contribution

A novel approach that predicts magnetic contrast variations from minimal measurements, validated through simulations on complex magnetic surfaces.

Findings

The method accurately predicts magnetic contrast reversals.

Tip electronic structure significantly influences magnetic contrast.

The approach reduces experimental measurement efforts.

Abstract

This work is concerned with the theoretical description of the contrast, i.e., the apparent height difference between two lateral surface positions on constant current spin-polarized scanning tunneling microscopy (SP-STM) images. We propose a method to predict the bias voltage dependent magnetic contrast from single point tunneling current or differential conductance measurements, without the need of scanning large areas of the surface. Depending on the number of single point measurements, the bias positions of magnetic contrast reversals and of the maximally achievable magnetic contrast can be determined. We validate this proposal by simulating SP-STM images on a complex magnetic surface employing a recently developed approach based on atomic superposition. Furthermore, we show evidence that the tip electronic structure and magnetic orientation have a major effect on the magnetic contrast. Our theoretical prediction is expected to inspire experimentalists to considerably reduce measurement efforts for determining the bias dependent magnetic contrast on magnetic surfaces.