Impact of nongeminate recombination on the performance of pristine and annealed P3HT:PCBM solar cells

TL;DR

This study uses transient photovoltage and charge extraction techniques to analyze how nongeminate recombination limits the performance of both pristine and annealed P3HT:PCBM solar cells, revealing that recombination dominates losses across various conditions.

Contribution

It demonstrates that nongeminate recombination loss current alone can describe the entire j-V characteristic in both pristine and annealed devices, even at low temperatures.

Findings

Nongeminate recombination is the main performance-limiting process.

Recombination loss current describes the entire j-V curve.

Charge photogeneration remains voltage independent.

Abstract

Transient photovoltage (TPV) and voltage dependent charge extraction (CE) measurements were applied to poly(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunction solar cells to analyze the limitations of solar cell performance in pristine and annealed devices. From the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities n(V) the nongeminate loss current jloss of the device is accessible. We found that jloss alone is sufficient to describe the j-V characteristics across the whole operational range, for annealed and, not yet shown before, also for the lower performing pristine solar cells. Even in a temperature range from 300 K to 200 K nongeminate recombination is found to be the dominant and, therefore, performance limiting loss process. Consequently, charge photogeneration is voltage independent in the voltage range studied.