Simulation of boron diffusion during low-temperature annealing of implanted silicon
O. I. Velichko, A. P. Kavaliova
TL;DR
This paper models boron redistribution in silicon during low-temperature annealing, revealing that impurity profile tails result from long-range boron interstitial migration, which impacts doping process accuracy.
Contribution
It introduces a model for boron diffusion during low-temperature annealing, emphasizing the role of interstitial migration in impurity profile formation.
Findings
Formation of impurity profile tails due to boron interstitial migration
Long-range migration significantly influences boron redistribution
Model aligns with experimental observations of impurity profiles
Abstract
Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.