Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond
L. M. Pham, N. Bar-Gill, D. Le Sage, A. Stacey, M. Markham, D. J., Twitchen, M. D. Lukin, R. L. Walsworth

TL;DR
This paper demonstrates preferential orientation of NV centers in diamond, enhancing optical read-out contrast and magnetic field sensitivity, advancing quantum sensing and information processing capabilities.
Contribution
It reveals a growth regime that induces NV center orientation, improving quantum measurement performance in diamond-based systems.
Findings
Preferential NV orientation along specific axes in CVD-grown diamonds.
Enhanced optical read-out contrast for NV multi-spin measurements.
Improved AC magnetic field sensitivity.
Abstract
We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical read-out contrast for NV multi-spin measurements, including enhanced AC magnetic field sensitivity, thus providing an important step towards high fidelity multi-spin-qubit quantum information processing, sensing and metrology.
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