Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

TL;DR

This paper introduces a physics-based model for monolayer TMD FETs that accurately predicts surface potential and drain current, incorporating quantum capacitance and drift-diffusion transport, and is validated with experimental data.

Contribution

It presents a novel analytical model for TMD FETs that includes quantum effects and carrier transport mechanisms, validated against measurements.

Findings

Model accurately predicts surface potential and drain current.

Model validated with experimental transistor data.

Device design insights for low-power applications.

Abstract

A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.