Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: On/off current ratio

TL;DR

This study investigates how the doping level and diameter of carbon nanotube FETs affect their on/off current ratio, revealing optimal doping points for different diameters and analyzing electron distribution changes.

Contribution

It provides a detailed analysis of the dependence of CNTFET performance on doping and diameter, identifying optimal doping levels for various diameters.

Findings

Lower diameters show decreased on/off ratio with increased doping

Higher diameters have an optimal doping level for maximum on/off ratio

Performance variations are explained by changes in electron distribution functions

Abstract

Choosing a suitable doping level of channel relevant to channel diameter is considered for determining the carbon nanotube field effect transistors' performance which seem to be the best substitute of current transistor technology. For low diameter values of channel the ratio of on/off current declines by increasing the doping level. But for higher diameter values there is an optimum point of doping level in obtaining the highest on/off current ratio. For further verification, the variations of performance are justified by electron distribution function's changes on energy band diagram of these devices. The results are compared at two different gate fields.