Probing the Nature of Defects in Graphene by Raman Spectroscopy

TL;DR

This paper uses Raman spectroscopy to analyze various defects in graphene, revealing how different defect types influence spectral features and providing insights into the nature of disorder.

Contribution

It offers a detailed correlation between Raman spectral features and specific defect types in graphene, advancing understanding of disorder characterization.

Findings

Maximum ID/ID' ratio (~13) for sp3 defects

Lower ID/ID' ratio (~7) for vacancy-like defects

Minimum ID/ID' ratio (~3.5) for boundary defects in graphite

Abstract

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (~ 13) for sp3-defects, it decreases for vacancy-like defects (~ 7) and reaches a minimum for boundaries in graphite (~3.5).