Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx
E. J. Wildman, J. M. S. Skakle, N. Emery, A. C. Mclaughlin
TL;DR
This paper reports the discovery of colossal magnetoresistance in the antiferromagnetic oxypnictide NdMnAsO1-xFx, highlighting its potential for magnetic memory devices due to the significant resistivity change under magnetic fields.
Contribution
It presents the first observation of CMR in Mn2+ oxypnictides, demonstrating the interplay between antiferromagnetic insulating and paramagnetic semiconducting phases.
Findings
CMR observed in NdMnAsO1-xFx
Resistivity decreases significantly under magnetic field
Potential for technological applications in magnetic memory
Abstract
Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of magnetic memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase with strong electron correlations and a paramagnetic semiconductor upon application of a magnetic field. The discovery of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an array of materials for further investigation and optimisation for technological applications.
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