Interstitial diffusion of ion-implanted boron in crystalline silicon
O. I. Velichko, A. P. Kavaliova
TL;DR
This paper models the long-range migration of boron interstitials in crystalline silicon during low temperature annealing, providing insights into dopant diffusion behavior in semiconductor manufacturing.
Contribution
It introduces a model specifically for boron interstitial diffusion during annealing, addressing a gap in understanding of dopant migration in silicon.
Findings
Model successfully predicts boron diffusion profiles.
Highlights importance of interstitial migration in dopant behavior.
Provides a basis for optimizing annealing processes.
Abstract
Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.
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Taxonomy
TopicsSilicon and Solar Cell Technologies · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design