Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires
D. C. Dillen, K. M. Varahramyan, C. M. Corbet, E. Tutuc

TL;DR
This study uses Raman spectroscopy to measure strain in individual Ge-SiGe core-shell nanowires, revealing strain-dependent shifts in vibrational modes and validating theoretical models with experimental data.
Contribution
It introduces a method to quantify core strain in Ge-SiGe nanowires using Raman spectroscopy and compares results with theoretical models.
Findings
Ge-Ge mode frequency is diameter-independent in Ge nanowires.
Core-shell nanowires show a strain-induced blue shift in Raman spectra.
Experimental strain measurements agree with continuum elasticity calculations.
Abstract
Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We compare the Raman spectra, and the frequency of the Ge-Ge mode measured in individual Ge-Si0.5Ge0.5 core-shell, and bare Ge NWs. We find that the Ge-Ge mode frequency is diameter-independent in GeNWs with a value similar to that of bulk Ge, 300.5 cm-1. On the other hand, Ge-Si0.5Ge0.5 core-shell nanowires reveal a strain-induced blue shift of the Ge-Ge mode, dependent on the relative core and shell thicknesses. Using lattice dynamical theory we determine the strain in the Ge core, and show that the results are in good agreement with values calculated using a continuum elasticity model.
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Taxonomy
TopicsNanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies
