Photophysics of single silicon vacancy centers in diamond: implications for single photon emission

TL;DR

This paper models the population dynamics of silicon vacancy centers in diamond, revealing their high brightness and stability as promising single photon sources for quantum technologies.

Contribution

It introduces a three-level population model including de-shelving and analyzes brightness, stability, and efficiency of SiV centers in diamond nanocrystals.

Findings

Maximum single photon rate of 6.2 Mcps

Estimated quantum efficiencies of SiV centers

Insights into brightness and photostability

Abstract

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.