Engineering a spin-fet: spin-orbit phenomena and spin transport induced by a gate electric field

TL;DR

This paper demonstrates how a gate electric field in a spin-FET induces spin-orbit interactions and confines electrons, enabling control over spin transport and flipping, with analytical solutions and robustness analysis.

Contribution

It provides an analytical solution for spin transport in a spin-FET with equal Rashba and Dresselhaus interactions at a specific gate field, and explores spin control via electric fields.

Findings

Gate electric field induces spin-orbit interactions in 2DEG.

Analytical solution for spin transport at equal Rashba and Dresselhaus strengths.

Spin flipping and blocking are robust against small variations in gate field.

Abstract

In this work, we show that a gate electric field, applied in the base of the field-effect devices, leads to inducing spin-orbit interactions (Rashba and linear Dresselhauss) and confines the transport electrons in a two-dimensional electron gas. On the basis of these phenomena we solve analytically the Pauli equation when the Rashba strength and the linear Dresselhaus one are equal, for a tuning value of the gate electric field $\mathcal{E}_g^*$. Using the transfer matrix approach, we provide a joint description of the transport by varying the bias electric field, $\mathcal{E}_b$. We can flip the spin of the incident electrons, or block the spin-down completely. The robustness of this behavior is proved when $\mathcal{E}_g^*$ changes by $\mathcal{E}_g^* \pm \delta \mathcal{E}_g$.