Numerical simulation of an energy-transport model for partially quantized particles

TL;DR

This paper develops and numerically simulates a quantum-classical energy-transport model for electron transport in nanoscale semiconductor devices, combining quantum subband analysis with classical transport assumptions.

Contribution

It introduces a coupled quantum-classical energy-transport model using subband decomposition and provides numerical simulations for ultra-scaled MOSFETs.

Findings

Explicit diffusion coefficients derived for the model

Simulation results demonstrate model effectiveness in nanoscale devices

Hierarchical quantum-classical approach simplifies complex transport analysis

Abstract

A coupled quantum-classical model describing the transport of electrons confined in nanoscale semiconductor devices is considered. Using the subband decomposition approach allows to separate the transport directions from the confinement direction. The motion of the gas in the transport direction is assumed to be classical. Then a hierarchy of adiabatic quantum-classical model is obtained, leading to subband SHE and energy-transport models, with explicit expression of the diffusion coefficients. The energy-transport-Schr\"odinger-Poisson model is then used for the numerical simulation of the transport of the electron gas in an ultra-scaled Double-Gate-MOSFET.